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Beilstein J. Nanotechnol. 2012, 3, 179–185, doi:10.3762/bjnano.3.19
Figure 1: Topography images of the SiC(0001) sample (a) before annealing, (b) after oxide removal at 1000 °C,...
Figure 2: Topography images of graphene layers epitaxially grown on SiC(0001); (a) preparation in UHV, (b) pr...
Figure 3: (a) Topographic image showing two steps found typically on samples prepared in an argon atmosphere....
Figure 4: Rendered images of graphene layers on SiC(0001) prepared in (a) UHV and (b) an argon atmosphere. Th...
Figure 5: Two-dimensional histograms based on the data set for the rendered images in Figure 4. The colour scheme rep...